| 摘要 |
A test structure (10) is provided for allowing a parametric test system, for example towards the end of a production line at a foundry, to measure the junction leakage of a semiconductor device such as an integrated circuit. The structure is formed as part of the device and comprises a MOSFET (3) whose source and drain are provided with connections (5 and 7) which are accessible to the tester for biasing the device and measuring the drain current. A capacitor (1) is connected between the gate of the MOSFET (3) and another connection (4) allowing the tester to supply various voltages to the connection (4). A junction diode (2) is connected between the gate of the MOSFET (3) and the body terminal and connection (6). During testing, the parametric tester supplies a voltage to the connection (4) to allow the capacitor 1 to be charged via the forward-biased diode (2). The connection (4) is then connected to another voltage such that the diode (2) becomes reverse-biased and its leakage current discharges the capacitor (1) so that the voltage on the gate of the MOSFET (3) falls. The drain current thus falls and the junction leakage through the diode (2) can be determined from the rate of change of the drain current and knowledge of the transfer characteristic of the MOSFET (3) and the capacitance of the capacitor (1). <IMAGE> |
