SEMICONDUCTOR DEVICE HAVING TRANSISTOR STRUCTURE WHICH INCLUDES GATE OXIDE LAYER AND GATE INSULATING LAYER FORMED ON SILICON SUBSTRATE, AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device transistor structure which includes a gate oxide layer and a gate insulating layer formed on a silicon substrate, and a fabricating method thereof are provided to prevent the damage of the silicon substrate, caused by injecting F ions, and effectively reduce a boundary level between a gate insulating layer and the silicon substrate. CONSTITUTION: A source and a drain are formed on an upper surface of a silicon substrate. A gate insulating layer is formed between the source and the drain. A gate electrode is formed on the gate insulating layer. A fluoric termination part including Si-F bond is formed around a boundary between the gate insulating layer and the silicon substrate. The content of atom F of the fluoric termination part has a peak value in the vicinity of the boundary between the gate insulating layer and the silicon substrate. In addition, the content of atom F of the fluoric termination part is more than 1x10¬20cm¬-3.