MATERIAL OF RESIST LOWER LAYER HAVING HIGH TRANSPARENCY, THE OPTIMUM REFRACTION INDEX AND QUENCHING COEFFICIENT, AND EXCELLENT ETCHING-RESISTANCE AND METHOD FOR FORMING PATTERN BY USING THE MATERIAL

摘要

PURPOSE: A material of a resist lower layer for a multilayered resist process is provided, which has high transparency, the optimum refraction index(n value) and quenching coefficient(k value), and excellent etching-resistance. And a method is provided also to form a pattern on a substrate by using the material by a lithography. CONSTITUTION: The material of the resist lower layer contains a polymer having the repeating unit represented by the formula 1, wherein R1-R4 are independently a hydrogen atom, a C1-C10 alkyl, a C1-C10 alkoxy, a C1-C10 alkoxy carbonyl, a C1-C10 carboxyl, and etc, Z is an alicyclic hydrocarbon, and a and b are positive numbers. And the method for forming a pattern comprises the steps of: forming the resist lower layer on a substrate by using the material; forming at least one resist upper layer of a photoresist composition on the resist lower layer to form a multilayered resist film; exposing a pattern circuit area of the multilayered resist film; developing to form a resist pattern on the resist upper layer; etching the resist lower layer by using the pattern-formed resist upper layer as a mask; and etching the substrate by using the pattern-formed multilayered resist film as a mask.