| 摘要 |
1,139,495. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. 6 July, 1967 [17 Aug., 1966], No. 36859/66. Heading H1K. A Schottky barrier device comprises a semiconductor wafer 7, e.g. of Si or Ge having a resistivity of the order of 1 ohm-cm., having a region 10 of reduced thickness, with a Schottky barrier-forming metal layer 14, e.g. of W, on one face of the region 10, and an ohmic contactforming metal layer 13 on the other face. Both layers 13 and 14 may cover the respective surfaces of the wafer 7, one or both of which surfaces may be provided with a recess, such as 8, by etching. Alternatively the layer on the recessed surface may comprise a pellet filling the recess. An insulating layer, e.g. of the oxide or nitride of the semi-conductor material, may underlie the barrier forming layer 14 to form a varactor diode. The free surface of the layer 14, if it is of W, may be plated with Ni or Au, contact being made to this by a whisker, large area pressure contacts, or soldered leads. |
