METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE IN FORMING PLURAL INTERCONNECTIONS IN ONE IDENTICAL INTERCONNECTION LAYER OVER SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method of manufacturing a semiconductor integrated circuit device in forming plural interconnections in one identical interconnection layer over a semiconductor substrate is provided to promote an increase of an integration degree by using a technique for reducing a memory size of an SRAM. CONSTITUTION: A method of manufacturing a semiconductor integrated circuit device in forming plural interconnections in one identical interconnection layer over a semiconductor substrate includes a dividing process and a forming process. The dividing process is performed to divide the interconnections into plural groups and prepare plural sheets of photo-masks. Each of the photo-masks is formed with a pattern for interconnections contained in each of the plural groups. The forming process is performed to form the interconnections by plural photo-lithography processes using the plural sheets of photo-masks.