METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING MONOS STRUCTURE

摘要

PURPOSE: A method for fabricating a semiconductor device having a MONOS(Metal Oxide Nitride Oxide Semiconductor) structure is provided to enhance the reliability by improving data retention characteristics. CONSTITUTION: The first insulating layer(3) is formed on the first region of a semiconductor substrate. The first gate electrode of the first field effect transistor is formed on the first region via the first insulating layer. The second insulating layer(6b) is formed on the second region. A charge storage layer of the second field effect transistor is formed to include hydrogen concentration of 10¬20 cm¬-3 or less over the second region via the second insulating layer. The second gate electrode of the second field effect transistor is formed above the second region via the second insulating layer and the charge storage layer. An impurity is implanted into a region adjacent to the first field effect transistor and the second field effect transistor, thereby forming the first conductive type impurity region.