| 摘要 |
PURPOSE: A method is provided to improve the yield and reliability of a semiconductor device by performing CMP(Chemical Mechanical Polishing) for STI(Shallow Trench Isolation) using an HSS(High Selectivity Slurry). CONSTITUTION: A pad oxide layer, a pad nitride layer, and a photoresist pattern are sequentially formed on a semiconductor substrate. A trench is formed by etching selectively the resultant structure using the photoresist pattern as an etching mask. The photoresist pattern is removed therefrom. A wall oxide layer and a silicon nitride layer are sequentially formed in the trench. A gap-fill oxide layer is formed thereon. A CMP process is performed on the gap-fill oxide layer by using an HSS. The HSS contains an abrasive and deionized water within a mixing ratio range of 1:4 to 1:6.
|
