| 摘要 |
PURPOSE: A method of manufacturing a landing plug contact of a semiconductor device is provided to reduce fabrication cost and to secure the margin of a photoresist layer by using two-step etching processes. CONSTITUTION: A plurality of source/drain regions(105,106) are formed in a semiconductor substrate(100) with an active region and a field region to align each gate electrode(104). An insulating layer(107) and an interlayer dielectric(108) are sequentially formed thereon. A line type first photoresist pattern for opening an active region alone is formed on the interlayer dielectric layer. The source and drain regions of the active region are exposed by performing a first etching process using the first photoresist pattern as an etching mask. The first photoresist pattern is removed therefrom. An anti-reflective coating and a hole type second photoresist pattern for exposing the drain region alone of the field region are sequentially formed thereon. The anti-reflective coating and the interlayer dielectric are secondly etched corresponding to the drain region of the field region by using the second photoresist pattern as an etching mask. The second photoresist pattern and the remaining anti-reflective coating are removed therefrom. A landing plug(112) is formed on the source and drain regions of the active region and on the drain region of the field region.
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