| 发明名称 |
Novel transistor with ultra shallow tip and method of fabrication |
| 摘要 |
A novel transistor (200) with a low resistance ultra shallow tip region (214) and its method of fabrication. The novel transistor of the present invention has a source/drain extension of tip region (210) comprising an ultra shallow region (214) which extends beneath the gate electrode and a raised region (216). <IMAGE> |
| 申请公布号 |
EP1253632(A3) |
申请公布日期 |
2004.12.08 |
| 申请号 |
EP20020015293 |
申请日期 |
1995.12.21 |
| 申请人 |
INTEL CORPORATION |
发明人 |
CHAU, ROBERT S.;PACKAN, PAUL A.;CHERN, CHAN-HONG;YAU, LEOPOLDO D.;JAN, CHIA-HONG;WELDON, KEVIN R. |
| 分类号 |
H01L21/225;H01L21/28;H01L21/336;H01L21/8238;H01L29/08;H01L29/417;H01L29/45;H01L29/49;H01L29/78 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
