SEMICONDUCTOR DEVICE FOR EMPLOYING METHOD FOR DESIGN OF NANOMETER SCALE DEVICE

摘要

PURPOSE: A semiconductor device for employing a method for a design of a nanometer scale device is provided to form a channel with a high-resistivity region having an impurity concentration of 10¬17 cm¬-3 or less by selecting a work function of a gate material. CONSTITUTION: A silicon pillar has a high-resistivity region and first and second highly doped regions formed at both sides of the high-resistivity region. The high-resistivity region has an impurity concentration of 10¬17 cm¬-3 or less. An insulator is used surrounding the high-resistivity region. A conductor is used surrounding the insulator. The conductor is made of a material which permits a voltage applied to the conductor to control an electric current flowing between first and second highly doped regions. The material has a work function bringing the high-resistivity region to a perfect depletion condition during the flow of the electric current between the first and the second highly doped regions.