| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to minimize the deformation of Ar resist by etching a thin film hard mask oxide using the ArF resist as an etch stop layer. CONSTITUTION: An interlayer dielectric(23) is deposited on a semiconductor substrate(21) including a plurality of gates(22). An i-line resist layer(24), a thin film hard mask oxide(25) and an ArF resist pattern(26) are sequentially formed on the interlayer dielectric. The thin film hard mask oxide is selectively etched by using the ArF resist pattern as an etch stop layer. The ArF resist pattern is removed therefrom. The thin film hard mask oxide is made of a PE based oxide layer. The ArF resist is made of COMA(CycloOlefin-Maleic Anhydride) or acrylate based polymer.
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