发明名称
摘要 The present invention relates to a method for reducing low-frequency noise in a cooled circuit wherein low-frequency noise in a cryogenic semiconductor device is reduced by carrying out thermal cure. The semiconductor device is turned on at a first temperature, and the temperature of the semiconductor device is temporarily raised, while flowing current in the semiconductor device, to a second temperature that is higher than the first temperature, and then cooling the temperature of the semiconductor device from the second temperature to a cryogenic temperature, at which the semiconductor device can operate.
申请公布号 JP3598377(B2) 申请公布日期 2004.12.08
申请号 JP20010342633 申请日期 2001.11.08
申请人 发明人
分类号 G01J1/44;G01J1/42;H01L21/324;H01L21/326;H01L29/808 主分类号 G01J1/44
代理机构 代理人
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