发明名称 |
Semiconductor device formed on silicon-on-insulator substrate |
摘要 |
A silicon-on-insulator device structure having a silicon-on-insulator substrate, a transistor and a control transistor is provided. The transistor and the control transistor are disposed on the silicon-on-insulator substrate. The transistor and the control transistor share a common source region. The drain region of the transistor is electrically connected to the main body of the transistor. By forming of a control transistor between the source terminal and the main body of the transistor and switching the control transistor on or off on demand, the silicon-on-insulator device embodies the advantages of both floating-body effect and body-tied characteristic.
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申请公布号 |
US6828633(B2) |
申请公布日期 |
2004.12.07 |
申请号 |
US20030248868 |
申请日期 |
2003.02.26 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
HUANG CHIU-TSUNG;LIAO KE-KUNG;CHUNG JEN-CHI;CHI LI-LUN |
分类号 |
H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L27/12;H01L31/039 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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