发明名称 |
Injection lasers fabricated from semiconducting polymers |
摘要 |
A solid state lasing structure comprising a field effect transistor in which source and drain electrodes are disposed on a semiconducting light emitting organic polymer forming an active layer on a gate whereby current between the source and drain electrodes defines and flows along a channel in the active layer to define a recombination and emission zone.
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申请公布号 |
US6828583(B2) |
申请公布日期 |
2004.12.07 |
申请号 |
US20040797239 |
申请日期 |
2004.03.09 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
HEEGER ALAN J.;PAUCHARD-STREBEL MARC;VEHSE MARTIN;EDMAN LUDVIG;MOSES DANIEL |
分类号 |
H01L27/01;H01L27/12;H01L29/24;H01L35/24;H01L51/00;H01L51/52;H01S5/04;H01S5/062;H01S5/125;H01S5/32;H01S5/36;(IPC1-7):H01L35/24 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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