发明名称 Injection lasers fabricated from semiconducting polymers
摘要 A solid state lasing structure comprising a field effect transistor in which source and drain electrodes are disposed on a semiconducting light emitting organic polymer forming an active layer on a gate whereby current between the source and drain electrodes defines and flows along a channel in the active layer to define a recombination and emission zone.
申请公布号 US6828583(B2) 申请公布日期 2004.12.07
申请号 US20040797239 申请日期 2004.03.09
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 HEEGER ALAN J.;PAUCHARD-STREBEL MARC;VEHSE MARTIN;EDMAN LUDVIG;MOSES DANIEL
分类号 H01L27/01;H01L27/12;H01L29/24;H01L35/24;H01L51/00;H01L51/52;H01S5/04;H01S5/062;H01S5/125;H01S5/32;H01S5/36;(IPC1-7):H01L35/24 主分类号 H01L27/01
代理机构 代理人
主权项
地址