发明名称 Method of reducing an electrostatic charge on a substrate during a PECVD process
摘要 Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto a top surface of a susceptor support plate disposed within a deposition chamber wherein the conductive layer dissipates the electrostatic charge on the bottom surface of the substrate during a plasma enhanced chemical vapor deposition process. Also provided are a method of depositing a thin film during a plasma enhanced chemical vapor deposition process using the methods disclosed herein and a conductive susceptor.
申请公布号 US6827987(B2) 申请公布日期 2004.12.07
申请号 US20010927698 申请日期 2001.07.27
申请人 APPLIED MATERIALS, INC. 发明人 WON TAE KYUNG;CHOI SOO YOUNG;TAKEHARA TAKAKO;HARSHBARGER WILLIAM R.
分类号 C23C16/458;(IPC1-7):H05H1/24 主分类号 C23C16/458
代理机构 代理人
主权项
地址