发明名称 |
Semiconductor memory device using magneto resistive element and method of manufacturing the same |
摘要 |
A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and comprising a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.
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申请公布号 |
US6828641(B2) |
申请公布日期 |
2004.12.07 |
申请号 |
US20030656283 |
申请日期 |
2003.09.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HOSOTANI KEIJI;NAKAJIMA KENTARO |
分类号 |
G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/12;(IPC1-7):H01L43/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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