发明名称 |
Method using wet etching to trim a critical dimension |
摘要 |
A method for using an isotropic wet etching process chemical process for trimming semiconductor feature sizes with improved critical dimension control including providing a hard mask overlying a substrate included in a semiconductor wafer said hard mask patterned for masking a portion of the substrate for forming a semiconductor feature according to an anisotropic plasma etching process; isotropically wet etching the hard mask to reduce a dimension of the hard mask prior to carrying out the anisotropic plasma etching process; and, anisotropically plasma etching a portion of the substrate not covered by the hard mask to form the semiconductor feature.
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申请公布号 |
US6828205(B2) |
申请公布日期 |
2004.12.07 |
申请号 |
US20020072798 |
申请日期 |
2002.02.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
TSAI MING-HUAN;HUANG MING-JIE;LIN HUAN-JUST;TAO HUN-JAN |
分类号 |
H01L21/302;H01L21/461;H01L21/8222;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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