| 发明名称 |
RTP process chamber pressure control |
| 摘要 |
A method that includes flowing an inert gas into an interior of a single wafer process chamber to create a pressure in the interior that is greater than an ambient pressure; and maintaining the greater interior pressure during a wafer transfer with the single wafer process chamber.
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| 申请公布号 |
US6828234(B2) |
申请公布日期 |
2004.12.07 |
| 申请号 |
US20020108779 |
申请日期 |
2002.03.26 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TAM NORMAN;TROWBRIDGE TERESA |
| 分类号 |
H01L21/00;H01L21/302;H01L21/44;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/00 |
| 代理机构 |
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