发明名称 Semiconductor structure having in-situ formed unit resistors and method for fabrication
摘要 An electronic structure that has in-situ formed unit resistors and a method for fabricating such structure are disclosed. The electronic structure that has in-situ formed unit resistors consists of a first plurality of conductive elements formed in an insulating material layer, a plurality of electrically resistive vias formed on top and in electrical communication with at least one of the first plurality of conductive elements, and a second plurality of conductive elements formed on top of and in electrical communication with at least one of the plurality of electrically resistive vias. The present invention novel structure may further be formed in a multi-level configuration such that multi-level resistors may be connected in-series to provide larger resistance values. The present invention novel structure may further be combined with a capacitor network to form desirable RC circuits.
申请公布号 US6828232(B2) 申请公布日期 2004.12.07
申请号 US20030705116 申请日期 2003.11.10
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CABRAL, JR. CYRIL;CLEVENGER LAWRENCE;HSU LOUIS LU-CHEN;WONG KEITH KWONG HON
分类号 H01L21/02;H01L27/06;(IPC1-7):H01L21/476 主分类号 H01L21/02
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