发明名称 Method and apparatus for etching and deposition using micro-plasmas
摘要 Plasma etching or deposition is performed over substrates using spatially localized micro-plasmas operating in parallel with each other. A plasma generating electrode is positioned closely adjacent to an exposed surface of the substrate, as on the surface of a dielectric layer applied to the substrate. A selected pressure of the gas in the region of the electrode and the substrate is established, and a voltage is applied between the plasma generating electrode and the substrate or a second electrode to ignite a plasma in the region between the plasma generating electrode and the substrate for a selected period of time. This plasma is limited to the region of the plasma generating electrode adjacent to the exposed surface so that the substrate is plasma treated in a desired pattern.
申请公布号 US6827870(B1) 申请公布日期 2004.12.07
申请号 US20000686259 申请日期 2000.10.11
申请人 WISCONSIN ALUMNI RESEARCH FOUNDATION 发明人 GIANCHANDANI YOGESH B.;WILSON CHESTER G.
分类号 B44C1/22;C23F1/00;H01J37/32;H01L21/3065;(IPC1-7):B44C1/22;H01L22/302 主分类号 B44C1/22
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