发明名称 |
Method and apparatus for etching and deposition using micro-plasmas |
摘要 |
Plasma etching or deposition is performed over substrates using spatially localized micro-plasmas operating in parallel with each other. A plasma generating electrode is positioned closely adjacent to an exposed surface of the substrate, as on the surface of a dielectric layer applied to the substrate. A selected pressure of the gas in the region of the electrode and the substrate is established, and a voltage is applied between the plasma generating electrode and the substrate or a second electrode to ignite a plasma in the region between the plasma generating electrode and the substrate for a selected period of time. This plasma is limited to the region of the plasma generating electrode adjacent to the exposed surface so that the substrate is plasma treated in a desired pattern.
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申请公布号 |
US6827870(B1) |
申请公布日期 |
2004.12.07 |
申请号 |
US20000686259 |
申请日期 |
2000.10.11 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
GIANCHANDANI YOGESH B.;WILSON CHESTER G. |
分类号 |
B44C1/22;C23F1/00;H01J37/32;H01L21/3065;(IPC1-7):B44C1/22;H01L22/302 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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