| 摘要 |
A giant magneto-resistive effect element includes a lamination layer structure portion (10) in which at least a free layer (4) the magnetization of which is rotated in response to an external magnetic field, a fixed layer (2), an antiferromagnetic layer (1) for fixing the magnetization of the fixed layer (2) and a nonmagnetic layer (3) interposed between the free layer (4) and the fixed layer (2) are laminated one on top of another. A sense current flows to substantially a lamination layer direction of the lamination layer structure portion (10) and the lamination layer structure portion (10) has disposed thereon an electric conduction restricting layer (S) in which very small electric conduction areas are dispersedly formed across a path of said sense current, whereby an element resistance can be increased and the amount of magneto-resistance change can be increased. Thus, a magneto-resistive effect element, a magnetic sensor using magneto-resistive effect, a magnetic head using magneto-resistive effect and a magnetic memory become able to increase the amount of magneto-resistive change.
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