发明名称 Method for forming interlayer dielectric film
摘要 A method for forming an interlayer dielectric film includes the step of forming the interlayer dielectric film out of an organic/inorganic hybrid film by plasma-polymerizing a source material, including an organosilicon compound, at a relatively high pressure within an environment containing nitrogen gas as a dilute gas.
申请公布号 US6828257(B2) 申请公布日期 2004.12.07
申请号 US20020224313 申请日期 2002.08.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 AOI NOBUO
分类号 H01L21/31;H01L21/312;H01L21/469;(IPC1-7):H01L21/31 主分类号 H01L21/31
代理机构 代理人
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