发明名称 |
Magnetic ram cell with amplification circuitry and MRAM memory array formed using the MRAM cells |
摘要 |
A magnetic random access memory (MRAM) cell and a memory array formed from the MRAM cells are disclosed. The MRAM cell includes a magnetic tunneling junction and a transistor. The magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The gate of the transistor is coupled to a first end of the magnetic tunneling junction. The source of the transistor is coupled to a second end the magnetic tunneling junction. The drain of the transistor is coupled with an output for reading the magnetic memory cell. During reading, a read current is applied to the magnetic tunneling junction and the transistor is preferably operated in a saturation region.
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申请公布号 |
US6829160(B1) |
申请公布日期 |
2004.12.07 |
申请号 |
US20020079116 |
申请日期 |
2002.02.20 |
申请人 |
WESTERN DIGITAL (FREMONT), INC. |
发明人 |
QI QUIQUN (KEVIN);SHI XIZENG (STONE);GIBBONS MATTHEW |
分类号 |
G11C5/06;G11C7/00;G11C11/00;G11C11/15;G11C11/16;(IPC1-7):G11C11/00 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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