发明名称 |
Semiconductor device |
摘要 |
Crystal orientation planes exist randomly in a crystalline silicon film manufactured by a conventional method, and the orientation ratio is low with respect to a specific crystal orientation. A semiconductor film having a high orientation ratio for the {101} lattice plane is obtained if crystallization of an amorphous semiconductor film, which has silicon as its main constituent and contains from 0.1 to 10 atom % germanium, is performed after introduction of a metal element. A TFT is manufactured utilizing the semiconductor film.
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申请公布号 |
US6828587(B2) |
申请公布日期 |
2004.12.07 |
申请号 |
US20010880089 |
申请日期 |
2001.06.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MITSUKI TORU;KASAHARA KENJI;ASAMI TAKETOMI;TAKANO TAMAE;SHICHI TAKESHI;KOKUBO CHIHO |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/04;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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