| 发明名称 |
Enhanced transistor gate using E-beam radiation |
| 摘要 |
A process for forming a transistor having a gate width of less than 70 nm is disclosed herein. The process includes E-beam irradiation a gate patterned on a photoresist layer, trimming the gate patterned on the photoresist layer, and etching the gate patterned on the photoresist layer to a polysilicon layer disposed below the photoresist layer.
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| 申请公布号 |
US6828259(B2) |
申请公布日期 |
2004.12.07 |
| 申请号 |
US20010017855 |
申请日期 |
2001.12.14 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
FISHER PHILIP A.;YANG CHIH-YUH;PLAT MARINA V.;CALLAHAN RUSSELL R.A.;KHATHURIA ASHOK M. |
| 分类号 |
H01L21/28;H01L21/3213;(IPC1-7):H01L21/26;H01L21/42 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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