| 摘要 |
A method of producing a semiconductor chip includes (1) a first exposure step for exposing a device range inside a chip on a substrate, to a repetition pattern including a line and a space, wherein an exposure region of the repetition pattern has a size greater than the device range inside the chip, and (2) a second exposure step for exposing the device range inside the chip on the substrate, to a pattern which includes (i) a first line being parallel to the line of the repetition pattern and having substantially the same linewidth as that of the line or a first space being parallel to the space of the repetition pattern and having substantially the same width, and (ii) a second line of a width larger than the line of the repetition pattern or a second space of a width larger than the space of the repetition pattern. The first line overlaps with a portion of lines of the repetition pattern, or the first space overlaps with a portion of spaces of the repetition pattern. Also, the first and second exposure steps are carried out without a developing step interposed therebetween.
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