| 摘要 |
The inventive pattern forming method for transferring a bright line pattern to a photoresist material with a photomask having the bright line pattern includes a step of transferring the bright line pattern of the photomask to the photoresist material by exposure with a light exposure of at least four times and not more than 10 times the light exposure photosensitizing the photoresist material and inverting solubility. Thus, excellent CD-focus characteristics are attained thereby obtaining a pattern forming method and a method of fabricating a device with small dimensional dispersion. |
