METHOD OF FORMING CAPACITOR OF SEMICONDUCTOR DEVICE TO PREVENT LEANING OF ELECTRODE IN PROCESS FOR FORMING CAPACITOR BOTTOM ELECTRODE

摘要

PURPOSE: A method of forming a capacitor of a semiconductor device to prevent leaning of an electrode in a process for forming a capacitor bottom electrode is provided to prevent a malfunction due to the leaning of the electrode by forming an insulating layer for supporting the capacitor bottom electrode. CONSTITUTION: An oxide layer pattern for charge storage electrode is formed over a semiconductor substrate(100). A conductor for charge storage electrode is formed over an entire structure including the semiconductor substrate. A charge storage electrode(140) is formed by performing an etch-back process. A buried oxide layer is formed to bury the inside of the charge storage electrode. A nitride line pattern is formed over the charge storage electrode, the buried oxide layer, and the oxide layer pattern. The buried oxide layer and the oxide layer pattern are removed therefrom. A dielectric layer(170) is formed over the charge storage electrode. The nitride layer line pattern is removed therefrom.