METHOD FOR MANUFACTURING CMOS TRANSISTOR TO SIMPLIFY PROCESS USING SOURCE/DRAIN EXTENSION REGION

摘要

PURPOSE: A method for manufacturing a CMOS transistor is provided to simplify photo process by using an SDE(Source/Drain Extension) region. CONSTITUTION: A first and second gate(311,313) are formed on a semiconductor substrate(100) defined by a first and second active region(110,130). A first and second sacrificial spacer are formed at both sidewalls of the first and second gate. An N-type source/drain region(110b) is formed in the first active region by implanting dopants using a first photoresist pattern, the first gate and the first sacrificial spacer as a mask. The first sacrificial spacer is removed, and an N-type source/drain extension region(110a) is formed in the first active region by implanting dopants using the first photoresist pattern and the first gate as a mask. After the first photoresist pattern is removed, a P-type source/drain region(130b) is formed in the second active region by implanting dopants using a second photoresist pattern, the second gate and the second sacrificial spacer as a mask. The second sacrificial spacer is removed, and a P-type source/drain extension region(130a) is formed in the second active region by implanting dopants using the second photoresist pattern and the second gate as a mask.