METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE USING ALD, AND METHOD AND APPARATUS FOR FORMING METAL FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a metal line of a semiconductor device, and a method and an apparatus for forming a metal film of the semiconductor device are provided to improve the depositing-speed, step coverage, and gap-fill ability of a metal line by performing repeatedly ALD(Atomic Layer Deposition) processes using a tantalum amin derivatives. CONSTITUTION: An interlayer dielectric(23a) is formed on a substrate(20). A tantalum amin derivatives represented as a chemical formula of Ta(NR1)(NR2R3)3 is introduced to the insulating layer as a reaction material. The reaction material is partially adsorbed on the substrate and the residues of the reaction material are removed therefrom. A solid material containing TaN is formed by removing elements with ligand bonding from the reaction material by introducing reaction gas to the substrate. A metal line(27) is formed by performing repeatedly the solid material forming processes.