发明名称 DEFECT DETECTING APPARATUS AND METHOD USING LASER BEAMS WITH VARIOUS INCIDENT ANGLES ON WAFER
摘要 PURPOSE: A defect detecting apparatus and its method are provided to detect exactly lower defects of a wafer by using a plurality of laser beams with various incident angles on the wafer. CONSTITUTION: A defect detecting apparatus includes a laser beam source, a light transformation part, and a detecting part. The laser beam source(20) generates a laser beam with one incident angle on a wafer(W). The light transformation part(40) transforms the laser beam into a plurality of laser beams with various incident angles on the wafer. The detecting part(60) receives a plurality of beams reflected from the wafer and detects defects of the wafer by using the plurality of reflected beams.
申请公布号 KR20040102307(A) 申请公布日期 2004.12.04
申请号 KR20030033856 申请日期 2003.05.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, SEON YONG;EOM, TAE MIN;JUN, CHUNG SAM;KIM, JEONG SU;YANG, YU SIN
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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