SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF TO IMPROVE CAPACITY OF MEMORY CELL PER UNIT AREA

摘要

PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to improve the capacity of a memory cell per a unit area at low cost by using a protruded semiconductor layer. CONSTITUTION: A semiconductor memory device includes a first conductive type semiconductor substrate(100), a plurality of protruded semiconductor layers(110) and a plurality of memory cells. The memory cell is formed on a surface of each protruded semiconductor layer. The memory cell is composed of a charge storing layer of an ONO layer structure(510,530,520), a control gate(500), and a second conductive type impurity-diffused layer(720).