| 摘要 |
A method for manufacturing an organic electro-luminescence element which comprises using an inductive coupling plasma source as a plasma generator, and comprises forming at first a polymer film (10) on the upper surface of a cathode electrode (9) of an organic EL substrate in an evacuated vacuum vessel by the use of the plasma CVD, and then forming thereon a silicon oxynitride film and a silicon nitride film(11), wherein protective films against oxidation (10 and 11) are formed on the upper surface of the organic EL element (9) by the ICP-CVD method. The method allows the formation of the films of a polymer, silicon oxynitride and a silicon nitride, as preventive films for an organic EL, at a low temperature of 80˚C or lower with no damage of an organic material by plasma, resulting in the prevention of the entry of moisture or oxygen from outside. |
