| 摘要 |
Prodn. of a storage cell comprises: (a) producing a layered semiconductor structure with individual cells, the structure comprising a transistor and storage capacitor; (b) producing transistors, bit lines (6) and word lines (5) in the structure; (c) producing an insulating layer (8) covering the transistors; (d) producing a dielectric layer (11) over the whole surface; (e) producing 1st openings (12) in the dielectric layer (11), the depth of the openings corresponding to the thickness of the dielectric layer (11); (f) forming 1st electrodes (13) in the 1st openings (12) for storage capacitors; (g) producing two openings (15) in the dielectric layer (11), the depth of the openings corresponding to the depth of the dielectric layer (11); (h) forming 2nd electrodes (16) in the 2nd openings (15); and (i) forming a cell contact (9) between the 1st electrodes (13) and one of the transistors.
|
