| 摘要 |
PURPOSE: A method for forming a partial self-aligned salicide contact is provided to be capable of conserving leakage characteristic and improving contact resistance characteristic by selectively forming a silicide layer at a contact region alone. CONSTITUTION: A gate electrode(34) is formed at the upper portion of a silicon substrate(31). An LDD(Lightly Doped Drain) spacer(35) is formed at both sidewalls of the gate electrode. After forming a source/drain region(36) at both sides of the gate electrode in the silicon substrate, the first interlayer dielectric(37) is formed on the entire surface of the resultant structure. The first contact hole is formed at the first interlayer dielectric. After forming a metal layer at the upper portion of the resultant structure, the first annealing process is carried out at the resultant structure. After removing the metal layer, a salicide layer(38) is formed at the predetermined portion of the resultant structure by carrying out a second annealing process. Then, the second interlayer dielectric(39) is formed on the entire surface of the resultant structure.
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