| 摘要 |
PURPOSE: A semiconductor laser diode is provided to prevent the spread of carriers in a lateral direction of a laser diode by constructing that a composition ratio of Al of a current limit layer is larger than that of cladding layer. CONSTITUTION: A substrate(101) is located on a lowest portion of a device. A first n-type GaN layer(102) is formed on the upper surface of the substrate(101). An n-type AlxGa1-xN cladding layer(103) is formed on the upper surface of the first n-type GaN layer(102). A second n-type GaN layer(104) is formed on approximate center portion of the upper surface of the n-type AlxGa1-xN layer(103) in a ridge strife of a predetermined width. An active layer(105) is formed on the upper surface of the second p-type GaN layer(106) in the same ridge strife as the second n-type GaN layer(104).
|
