METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SHALLOW TRENCH ISOLATION TO REDUCE EFFECTIVELY INNER STRESS OF SILICON SUBSTRATE

摘要

PURPOSE: A method of manufacturing a semiconductor device using STI(Shallow Trench Isolation) is provided to reduce effectively inner stress of a silicon substrate by using a non-uniform liner. CONSTITUTION: A trench(2) is formed in a semiconductor substrate(1). An insulating layer(4) for lessening inner stress of the substrate is formed at a bottom and sides of the trench. The insulating layer includes a first portion corresponding to the bottom of the trench and a second portion corresponding to the sides of the trench. The thickness of the first portion is different from that of the second portion.