| 摘要 |
PURPOSE: Provided are a resist material, especially chemically amplified positive resist material, which has high sensitivity, resolution, exposure latitude and process adaptability, and permits a satisfactory pattern after exposure and thermal stability, and a patterning process using the resist material. CONSTITUTION: The resist material comprises a polymer containing repeating units represented by the formula 1 and having a weight average molecular weight of 1,000 to 500,000. In the formula 1, R1 is hydrogen atom, hydroxy group, a straight or branched alkyl group, halogen atom or trifluoromethyl group, R2 is hydrogen atom, hydroxy group, halogen atom or trifluoromethyl, Y is methyl group, ethyl group or propyl group, and n is an integer of 1-4. While the chemically amplified positive resist material comprises an organic solvent, an acid generator and optionally a dissolution inhibitor in addition to the above polymer as a base resin. The resist material is applied onto a substrate, is carried out by heat treatment, is exposed to high-energy radiation or electron beam through a photomask, and is optionally developed with a developing liquid after heat treatment to form a resist pattern.
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