| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the failure rate of wafer crackings can be reduced in a semiconductor wafer of 140μm or less in thickness. SOLUTION: The distance between a lowermost end 6a and an OF (orientation flat) line 4 of a scribe line formed in a thinned wafer 1 is set to 2 mm or more. Thus, this area is flattened and cracking introduced from an OF part 3 is prevented, thereby reducing the failure rate of wafer crackings. COPYRIGHT: (C)2005,JPO&NCIPI |
