SUBSTRATES JOINING METHOD AND SUBSTRATES JOINING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a surface activation joining technique capable of joining substrates composed of ionic crystals etc., for which surface activation joining has been heretofore difficult, to each other by low temperature treatment. SOLUTION: The substrate joining device 10 for joining substrates 800a and 800b has: an irradiation chamber 100 into which the substrates 800a and 800b are transported; and a beam irradiation section 300 which prepares island-shaped metallic thin films by irradiating the surfaces to be joined of the substrates 800a and 800b with an inert gas ion beam or inert gas neutral atom beam and a metallic ion beam or metallic neutral atom beam in the irradiation chamber 100. The device joins the substrates to each other by surface activation via the metallic thin films. COPYRIGHT: (C)2005,JPO&NCIPI