| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to prevent the convergence of electric field in a cell region and to restrain short channel effect due to side-diffusion in a peripheral region by using multi-step ion-implantations. CONSTITUTION: A plurality of gate electrodes are formed on a semiconductor substrate(10) by etching selectively gate oxide layer(12), a conductive layer(14,16) and a nitride layer(18) using a gate mask. A sidewall insulating layer is formed thereon. An ion-implantation of n type impurities is performed on the resultant structure, so that an n type source and drain are formed in a cell region, a LDD(Lightly Doped Drain) structure for preventing thermal charges is formed in an NMOS(N channel Metal Oxide Semiconductor) transistor of a peripheral region, and the side-diffusion of a succeeding source and drain in a PMOS(P channel Metal Oxide Semiconductor) transistor of the peripheral region is previously restrained to prevent the short channel effect. A buffer layer(22) is formed thereon. An ion-implantation is performed to form sources and drains of the NMOS and PMOS transistors in the peripheral region. An additional ion-implantation of n type impurities is performed within the cell region.
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