| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition having excellent side lobe margin characteristics in microphotofabrication using far UV light, in particular, ArF excimer laser light. <P>SOLUTION: The resist composition contains: resin which contains a repeating unit derived from an isosorbide (meth)acrylate and of which the dissolving rate to an alkaline developing solution is increased by the effect of an acid; and a compound which has a naphthalene skeleton and generates an acid by being irradiated with active rays or radiation. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
