METHOD FOR MANUFACTURING STRAINED CRYSTALLINE LAYER ON INSULATOR, SEMICONDUCTOR STRUCTURE BY SAME METHOD, AND MANUFACTURED SEMICONDUCTOR STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a simple method for manufacturing a semiconductor structure which has crystal of high quality and also has a highly strained crystalline semiconductor layer on an insulator.

SOLUTION: The method is provided with: a semiconductor donor substrate comprising germanium and/or an A(III)-B(V)-semiconductor; at least one first crystalline epitaxial layer, in a first step, wherein the content of germanium and/or the A(III)-B(V)-semiconductor of a buffer layer of the first layer is decreased during the first step; at least one insulator layer, in a second step; wherein the first layer is provided between the substrate and the insulator layer; the first layer, which is split in a third step; and at least one second crystalline epitaxial layer on the split first layer, in a fourth step.

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