发明名称 HEARING-AID
摘要 PROBLEM TO BE SOLVED: To provide a low cost, highly reliable, and small data memory unit used in a hearing-aid. SOLUTION: The hearing-aid comprises a data memory unit composed of a plurality of semiconductor storage elements. The semiconductor storage element comprises a semiconductor film arranged on a well region or an insulating material provided on and within a semiconductor substrate, a gate insulating film formed on the semiconductor film, a single gate electrode formed on the gate insulating film, two memory function material formed at both sides of the side wall of the single gate electrode, a channel formation region formed under the single gate electrode, and source/drain diffusion areas arranged at both sides of the channel formation region. The semiconductor storage element is configured so that the amount of current flowing from one of the source/drain diffusion areas to the other of the source/drain diffusion areas is changed according to potential amount or polarization vector held at the memory function material, when voltage is applied to the gate electrode. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004343536(A) 申请公布日期 2004.12.02
申请号 JP20030139070 申请日期 2003.05.16
申请人 SHARP CORP 发明人 SHIBATA AKIHIDE;OGURA TAKAYUKI;IWATA HIROSHI
分类号 H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;H04R25/00;(IPC1-7):H04R25/00;H01L21/824 主分类号 H01L21/8247
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