| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with grooved element separation capable of easing the compression stress of a buried insulating film independently of the aperture width of the groove and having uniform and effective element performance, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device is provided with a semiconductor substrate 3 having grooves 5 on the surface side, insulating films 7 filled in the grooves 5, and contraction films 9 formed on the inwalls of the grooves 5 in a state that tensile stress is applied between the inwall of the groove 5 and the insulating film 7. COPYRIGHT: (C)2005,JPO&NCIPI
|
