COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor device in which the potential of a channel is stabilized and holes accumulated in the channel can be removed efficiently in an FET (field effect transistor) having the hetero-structure of AlGaN/GaN. SOLUTION: A buffer layer having a P-type conductivity is epitaxially grown on a conductive substrate. An electron transit layer composed of GaN is formed on the buffer layer. An electron supply layer composed of N-type AlGaN or N-type AlN is formed on the electron transit layer. A gate electrode is formed on the electron supply layer. A source electrode ohmic-connected to the electron transit layer and a drain electrode are arranged on both sides of the gate electrode. COPYRIGHT: (C)2005,JPO&NCIPI