SEMICONDUCTOR MEMORY, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, PORTABLE ELECTRONIC APPARATUS, AND IC CARD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory in which the problem of overerasure and resulting failure of reading can be eliminated. SOLUTION: The semiconductor memory comprises a field effect transistor 30A having a gate electrode 3, and a pair of source/drain diffusion regions 13 and 13 on a semiconductor substrate 1. Memory function bodies 11 and 11 are provided on the side of the gate electrode 3. The memory function body 11 comprises a charge storage film 23 of semiconductor or conductor having a function for storing charges and formed to have an L-shaped cross-section, a plurality of fine particles 10 having a function for storing charges, and insulators 9 and 16 having a function for preventing scattering of stored charges. Quantity of a current flowing from one source/drain diffusion region to the other source/drain diffusion region upon application of a voltage to the gate electrode 3 can be varied depending on the quantity of charges held in the charge holding section consisting of the charge storage film 23 and the fine particles 10. COPYRIGHT: (C)2005,JPO&NCIPI