MANUFACTURE OF CRYSTALLINE SILICON LAYER, MANUFACTURE OF SOLAR BATTERY, AND MANUFACTURE OF THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a crystalline silicon layer having a large crystal grain size and good quality on an amorphous substrate. SOLUTION: A crystalline cobalt disilicide layer 5 which has a crystal grain size easier to be greater than silicon in crystallization and which has a lattice constant proximate to that of silicon is formed on a glass substrate 1, and a cerium dioxide layer 6 having a higher melting point than silicon and having a lattice constant proximate to that of silicon is formed thereon. Moreover, an amorphous silicon layer 7 is formed thereon. After that, the amorphous silicon layer 7 is transformed into a crystalline silicon layer 10 by subjecting it to heat treatment or irradiation with laser beams. Thus, the crystalline silicon layer 10 is formed by a hetero-epitaxial technique, and the grain size of the crystalline silicon layer 10 becomes large in the same manner as the large grain size of the cobalt disilicide layer 5.