| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal, by which a value of V/G having a desired defect area and/or a desired defect-free area can be determined more precisely when the single crystal is pulled by controlling the value of V/G, and a desired quality single crystal can be pulled more exactly. SOLUTION: In the method for manufacturing the single crystal by pulling a seed crystal from a raw material melt by the Czochralski method, when the pulling speed at the time of pulling the single crystal is defined as V(mm/min), the temperature gradient of the solid-liquid interface is defined as G (K/mm), and the maximum temperature at the interface between a crucible and the raw material melt is defined as Tmax (°C), a range of the values of V/G (mm<SP>2</SP>/K×min) having the desired defect area and/or the desired defect-free area depending on at least Tmax (°C) is determined, and the single crystal is pulled by controlling the value of V/G (mm<SP>2</SP>/K×min) to be within the determined range. COPYRIGHT: (C)2005,JPO&NCIPI
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