| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of reducing surfaces in contact with gas other than a surface of a substrate in a reaction chamber and reducing unexpected film deposition on the surface of the reaction chamber. SOLUTION: A substrate mounting base 30 to mount a wafer 200 thereon is disposed in a reaction chamber 1. A chamber 2 to constitute the reaction chamber comprises a chamber sidewall 60, a chamber bottom plate 76, and a chamber lid 71. The chamber lid 71 has a chamber lower lid 72 having a shower plate 70 having a large number of small holes 69 as treatment gas feeding ports 68. A treatment gas lead pipe 67 as a treatment gas exhaust port 67 is provided on a center part of the shower plate 70 facing a center part of the wafer 200, and allowed to communicate with the reaction chamber 1. By providing the treatment gas lead pipe 67 as the treatment gas exhaust port 67 on the center part of the shower plate 70, the treatment gas exhaust port 67 is arranged closer to the center side of the wafer than the treatment gas feed ports 68 constituted of a large number of small holes 69. COPYRIGHT: (C)2005,JPO&NCIPI
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